Before any official announcement there are always related leaks, which is not missed in the case of Qualcomm. The information they wanted to work with Samsung to build the mobile Snapdragon processor 835.
Today Qualcomm is the officially announced that it will cooperate with Samsung and the construction will be done by 10nm FinFET process.
According to Qualcomm the 10nm FinFET process helps occupied up to 30% less space. It has 27% better efficiency and 40% less energy consumption. The new chip will allow manufacturers to create smaller devices or to include other pieces.
The new processor is the first to come with Quick Charge 4 also. The Qualcomm says Quick Charge 4 provides 20% faster charging and 30% better efficiency than the Quick Charge 3. This is done thanks to Dual Charge parallel charging technology . It also supports USB-C and USB Power Delivery standards, meaning you can charge fast USB-PD devices like Nexus and Pixel and new USB-C MacBooks using Quick Charge 4 charger.
The Quick Charge 4 includes third generation INOV or Intelligent Negotiation for Optimum Voltage, providing real-time energy management. The Qualcomm also introduced two new power management ICs, SMB1380 and SMB1381, which have low resistance, up to 95% peak efficiency and advanced features Fast Charge.
The Snapdragon 835 is expected to enter the devices of the 2017 first quarter.
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